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4.0-11.0 GHz GaAs MMIC Buffer Amplifier
September 2007 - Rev 17-Sep-07
B1007-BD Chip Device Layout
Features
Excellent Transmit LO/Output Buffer Stage Compact Size 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband's two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id1) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.0 VDC 180 mA +0.3 VDC +20.0 dBm -65 to +165 OC -55 to MTTF Graph1 MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure Output Power for 1dB Compression (P1dB) 2 Saturated Output Power (Psat) Drain Bias Voltage (Vd2) Gate Bias Voltage (Vg2) Supply Current (Id) (Vd=4.0V, Vg2=-0.5V Typical)
(2) Measured using constant current.
Units GHz dB dB dB dB dB dB dBm dBm VDC VDC mA
Min. 4.0 -1.0 -
Typ. 20.0 12.0 23.0 +/-1.5 65.0 4.5 +20.0 +21.0 +4.0 -0.5 90
Max. 11.0 +5.5 0.0 -
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC Buffer Amplifier
September 2007 - Rev 17-Sep-07
B1007-BD
Buffer Amplifier Measurements
XB1007-BD Vd=4.0 V, Id=130 mA, Vg2=Open
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz) +95 Deg C -30 Deg C +25 Deg C
0 -10 -20 Reverse Isolation (dB) -30 -40 -50 -60 -70 -80 -90 -100 -110 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz) +95 Deg C -30 Deg C +25 Deg C
XB1007-BD Vd=4.0 V, Id=130 mA, Vg2=Open
Gain (dB)
XB1007-BD Vd=4.0 V, Id=130 mA, Vg2=Open
0 -5 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0
*Includes fixture losses
XB1007-BD Vd=4.0 V, Id=130 mA, Vg2=Open
0
Output Return Loss (dB)
Input Return Loss (dB)
-10
-15
-20
-25
-30 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz) +95 Dec C -30 Deg C +25 Deg C
*Includes fixture losses
Frequency (GHz) +95 Deg C -30 Deg C +25 Deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC Buffer Amplifier
September 2007 - Rev 17-Sep-07
B1007-BD
Buffer Amplifier Measurements (cont.)
XB1007-BD Vd=4.5 V, Id=130 mA, Vg2=Open
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz) +95 Deg C -30 Deg C +25 Deg C 0 -10 -20 Reverse Isolation (dB) -30 -40 -50 -60 -70 -80 -90 -100 -110 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz) +95 Deg C -30 Deg C +25 Deg C
XB1007-BD Vd=4.5 V, Id=130 mA, Vg2=Open
Gain (dB)
XB1007-BD Vd=4.5 V, Id=130 mA, Vg2=Open
0 -5 -5 -10
Output Return Loss (dB)
XB1007-BD Vd=4.5 V, Id=130 mA, Vg2=Open
0
Input Return Loss (dB)
-15 -20 -25 -30 -35
-10
-15
-20
-25 -40 -45 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0
*Includes fixture losses
-30 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz) +95 Dec C -30 Deg C +25 Deg C
*Includes fixture losses
Frequency (GHz) +95 Deg C -30 Deg C +25 Deg C
XB1007-BD Vd=4.5 V, Id=130 mA, Vg2=Open Pin=+5 dBm
24.0 23.5
Saturated Output Power (dBm)
23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Frequency (GHz) +95 deg C -30 deg C +25 deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC Buffer Amplifier
September 2007 - Rev 17-Sep-07
B1007-BD
Buffer Amplifier Measurements (cont.)
XB1007-BD Vd=5.0 V, Id=130 mA, Vg2=Open
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz) +95 Deg C -30 Deg C +25 Deg C 0 -10 -20 Reverse Isolation (dB) -30 -40 -50 -60 -70 -80 -90 -100 -110 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz) +95 Deg C -30 Deg C +25 Deg C
XB1007-BD Vd=5.0 V, Id=130 mA, Vg2=Open
Gain (dB)
XB1007-BD Vd=5.0 V, Id=130 mA, Vg2=Open
0 -5 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0
*Includes fixture losses
XB1007-BD Vd=5.0 V, Id=130 mA, Vg2=Open
0
Output Return Loss (dB)
Input Return Loss (dB)
-10
-15
-20
-25
-30 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz) +95 Dec C -30 Deg C +25 Deg C
*Includes fixture losses
Frequency (GHz) +95 Deg C -30 Deg C +25 Deg C
XB1007-BD Vd=5.0 V, Id=130 mA, Vg2=Open Pin=+5 dBm
24.0 23.5
Saturated Output Power (dBm)
23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Frequency (GHz) +95 deg C -30 deg C +25 deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC Buffer Amplifier
September 2007 - Rev 17-Sep-07
B1007-BD
Buffer Amplifier Measurements (cont.)
XB1007-BD Vd=See Legend, Id=130 mA, Vg2=Open
30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 Frequency (GHz) Vd=4.0V Vd=4.5V Vd=5.0 V
XB1007-BD Vd=See Legend, Id=130 mA, Vg1=Open
7 6 5
Noise Figure (dB)
Gain (dB)
4 3 2 1 0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Frequency (GHz) Vd=4.0 V Vd=4.5 V Vd=5.0 V
XB1007-BD Vd=5.0 V, Id=130 mA, Vg2=Open
65 60
Output Third Order Intermods (dBc)
34 33
XB1007-BD Vd=5.0 V, Id=130 mA, Vg2=Open
55 50 5.0 GHz 45 40 35 30 25 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Output Power SCL (dBm) 6.0 GHz 7.0 GHz 8.0 GHz 9.0 GHz 10.0 GHz
Output Third Order Intercept (dBm)
32 31 30 29 28 27 26 25 24 23 22 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Output Power SCL (dBm) 5.0 GHz 6.0 GHz 7.0 GHz 8.0 GHz 9.0 GHz 10.0 GHz
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC Buffer Amplifier
September 2007 - Rev 17-Sep-07
B1007-BD
S-Parameters
Typcial S-Parameter Data for XB1007-BD Vd=4.5 V, Id=130 mA Frequency (GHz) 0.045 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 S11 (Mag) 0.978 0.558 0.292 0.211 0.189 0.148 0.049 0.031 0.052 0.089 0.044 0.014 0.058 0.141 0.223 0.279 0.329 0.361 0.376 0.373 0.361 S11 (Ang) -4.96 -47.76 -50.93 -59.68 -81.69 -92.58 -131.19 103.39 40.99 14.70 20.61 91.02 124.81 114.80 104.74 92.29 77.30 67.40 60.85 52.87 48.90 S21 (Mag) 0.025 2.108 5.334 8.848 12.975 16.002 17.813 16.657 16.006 14.867 14.065 12.785 11.218 9.492 7.781 6.067 4.663 3.548 2.701 2.084 1.623 S21 (Ang) -167.48 96.03 55.58 17.23 -20.85 -61.20 -103.17 -140.92 -173.62 154.53 123.27 91.14 59.48 28.22 -2.27 -31.02 -57.12 -80.79 -103.10 -123.45 -142.31 S12 (Mag) 0.0012 0.0001 0.0009 0.0016 0.0013 0.0010 0.0006 0.0010 0.0018 0.0027 0.0021 0.0014 0.0018 0.0021 0.0037 0.0041 0.0038 0.0030 0.0058 0.0082 0.0105 S12 (Ang) 2.71 -117.16 141.34 81.43 32.52 14.48 -143.50 90.00 76.58 60.07 -3.97 -34.03 -103.20 -159.33 160.77 132.87 133.16 141.13 134.50 102.56 61.49 S22 (Mag) 1.000 0.881 0.646 0.502 0.392 0.299 0.235 0.183 0.177 0.160 0.127 0.049 0.074 0.216 0.370 0.501 0.610 0.693 0.760 0.794 0.804 S22 (Ang) -3.23 -75.42 -133.66 176.53 126.19 71.12 2.95 -58.81 -98.54 -133.12 -159.96 -166.81 -66.32 -78.40 -101.39 -122.23 -142.71 -159.49 -175.38 170.52 159.64
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC Buffer Amplifier
September 2007 - Rev 17-Sep-07
B1007-BD
0.241 (0.009) 0.841 (0.033)
Mechanical Drawing
1.100 (0.043) 0.790 (0.031)
2 1
3 4 0.790 (0.031)
5 0.0 0.0 0.105 (0.004) 1.100 (0.043)
(Note: Engineering designator is 8MPA0811)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads (except Vd3) are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads (and Vd3) are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 0.75 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vg1) Bond Pad #3 (Vd) Bond Pad #4 (RF Out)
Vd
Bypass Capacitors - See App Note [2]
Bond Pad #5 (Vg2)
Bias Arrangement
Vg1
2
RF In
3 4
RF Out
1
5
Vg2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC Buffer Amplifier
September 2007 - Rev 17-Sep-07
B1007-BD
App Note [1] Biasing - The device provides variable gain with adjustable bias regulation. For optimum linearity performance, it is recommended to bias this device at Vd=4V with Id=90 mA (Vg2 at approximately -0.5V and Vg1 left open). It is also recommended to use active biasing to control the drain currents because this gives the most reproducible results over temperature or RF level variations. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement - For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Graphs
1.00E+09
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
XB1007-BD Vd=4.0 V Id=130 mA
1.00E+04
XB1007-BD Vd=4.0 V Id=130 mA
1.00E+08
1.00E+03
MTTF (hours)
1.00E+07
FITS
1.00E+02
1.00E+06
1.00E+01
1.00E+05 55 65 75 85 95 105 115 125 Backplate Temperature (deg C)
1.00E+00 55 65 75 85 95 105 115 125 Backplate Temperature (deg C)
XB1007-BD Vd=4.0 V Id=130 mA
172 170 168 166 164
220 210 200 190
XB1007-BD Vd=4.0 V Id=130 mA
Rth (deg C/W)
158 156 154 152 150 148 146 144 142 140 55 65 75 85 95 105 115 125 Backplate Temperature (deg C)
Tch (deg C)
162 160
180 170 160 150 140 130 120 55 65 75 85 95 105 115 125 Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
4.0-11.0 GHz GaAs MMIC Buffer Amplifier
September 2007 - Rev 17-Sep-07
B1007-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C +/- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Part Number for Ordering XB1007-BD-000V XB1007-BD-EV1 Description
Where "V" is RoHS compliant die packed in vacuum release gel paks XB1007 die evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 9 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.

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